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In this paper the results obtained for a new process flow that integrates a high performance flash cell for automotive application with a state of the art 65 nm CMOS have been presented. Despite the several specific process steps introduced for the first time on embedded technologies, the MOS performances have not been impacted by the integration of the flash cell and the related HV MOS and the results...
Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
In this paper we present a low cost fault-tolerant attitude determination system to a scientific satellite using COTS devices. We related our experience in developing the attitude determination system, where we combine proven fault tolerance techniques to protect the whole system composed only by COTS from the effects produced by transient faults. We detailed the failure cases and the detection, reconfiguration...
In this work, we have successfully demonstrated SONOS memories with embedded Si-NCs in silicon nitride by in-situ deposition method. The self-assembly silicon nanocrystals were in-situ deposited within the Si3N4 storage layer by dissociation of dichlorosilane (SiH2Cl2) gas to a high density of 9 times 1011 cm-2. This new structure exhibits larger memory windows for up to 6 V, better program/erase...
The reliability of advanced embedded non-volatile memories has been discussed using the 2T-FNFN devices example. The write/erase endurance and the data retention are the most important reliability parameters. The intrinsic reliability mechanisms can be addressed through single cell evaluation, while the cell-to-cell variation determines the product level reliability. The cell-to-cell variation can...
The magnetic random access memory (MRAM) is considered one of the potential candidates that will replace current on-chip memories (RAM, EEPROM, and flash memory) in the future. The MRAM is fast and does not need a high supply voltage for read/write operations, and is compatible with the CMOS technology. It can also endure almost unlimited read/write cycles. These combined advantages of RAM and flash...
An integrated voltage reference generator, designed for being incorporated in standard 90-nm CMOS technology flash memories, is described in this paper. A fully MOSFET based approach, using also subthreshold operated devices, has been adopted in order to achieve low-voltage and low-power requirements and to overcome the difficulties of conventional band-gap reference circuits. The proposed circuit,...
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