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A growing need for eco-friendly energy sources have led recently to a frantic search of new compositional systems for photovoltaic applications. The nanocomposite titania-germanium (TiO2-Ge) systems represent a new viable family of optoelectronic materials. Their structural, optical and electronic properties can be easily tailored by customizing the density and size of Ge dots in the TiO2 matrix....
Ge Nanocrystallites (nc-Ge) have been formed by 250 keV Ge+74 implantation at fluences of [0.5; 0.8; 1; 2; 3; 4]times1016 atoms/cm2 into 300-nm-thick SiO2 layer thermally grown on p-type Si (100) substrate, followed by thermal treatment at 1000 degC in forming gas atmosphere for 1 hour. All the samples show a broad Raman spectrum with fluences variation as function of the shift Raman. Ge+-dose dependence...
The suitability of using dual-mode PECVD, in conjunction with high temperature annealing, to fabricate arrays of silicon nanocrystals in a nitride matrix over large areas is investigated. The formation of nanocrystals is verified using TEM, XRD, micro-Raman and FTIR. Initial results show reliable growth of a superlattice of Si nanocrystals over an area of 14 by 10.5 cm
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