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Epitaxial growth of 4H-SiC is reported in a horizontal low-pressure hot-wall (LP-HW-CVD) reactor at temperature 1580degC and 100 mbar. The substrates were Si-face, n-type, 4H-SiC oriented 8deg off-axis toward the [1 12 macr 0] direction. Surface of SiC epitaxial layers were studied. Atomic force microscope (AFM) and scanning electron microscopy (SEM) were used to investigate the epitaxial layer surface...
We prepared silicon carbide (SiC) thin films by hot-wire chemical vapor deposition (HW-CVD) using methane as a carbon source gas at substrate temperature of 325degC and investigated the influence of filament temperature, Tf, on the structure and optical properties of the resulting films. X-ray diffraction patterns showed that film prepared at Tf=1400degC was amorphous SiC:H and that films prepared...
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