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Beta-phase gallium oxide (Ga2O3) is a promising wide bandgap semiconductor possessing a larger bandgap (∼4.8 eV) and critical electric field strength (∼8 MV/cm) than GaN and SiC [1]. Early metal-oxide-semiconductor field-effect transistors (MOSFETs) have shown promising depletion-mode operation with high critical field strength [2], high-current density [3] and high breakdown voltage [4]. On native...
This paper reports the DC and RF characteristics of AlN/GaN MOS-HEMTs passivated with thin Al2O3 formed by thermal oxidation of evaporated aluminium. Device fabrication involved wet etching of evaporated Al from the ohmic contact regions prior to metal deposition. This approach yielded an average contact resistance of ~0.76 Ωmm extracted from transmission line method (TLM) characterisation. Fabricated...
This paper reports a novel method for producing low ohmic contact resistance, RC, as well as low sheet resistance, Rsh, on AlN/GaN MOS-HEMT structures. The method relies on the protection of the very sensitive AlN epi-layer from exposure to liquid chemicals during processing using evaporated Al, which on thermal oxidation forms Al2O3. The Al2O3 acts as a surface passivant and as a gate dielectric...
Internally-matched 4H-SiC MESFET with 4times20 mm of the total gate width was demonstrated. The SiC MESFET structure consists of a channel layer with doping concentration of 2.3times1017 cm-3 and a cap layer with doping concentration of 1.5times1019 cm-3. A lightly p-doped buffer layer was employed between the substrate and the channel layer. Dry etching and high-temperature oxidation were employed...
This study reports, for the first time, AlGaAs/InGaAs/AlGaAs high-electron mobility transistors (HEMTs) devices and single-pole-single-throw (SPST) switches with utilizing n+-type doping on etching stop AlAs layer (M-HEMTs) designs were fabricated and investigated. We doping on etching stop AlAs layer to reduce parasitic resistances and enhance device DC and RF power performance. These modified M-HEMTs(HEMTs)...
AIN/GaN metal insulator semiconductor field effect transistors (MISFETs) on a sapphire substrate with 5 nm AIN barrier layer were fabricated using a simple wet-etching technique. Fabricated AIN/GaN MISFETs with 1 mum gate length and 200 mum gate width showed a maximum drain current density of 380 mA/mm and a peak extrinsic transconductance of 85 mS/mm. Power characteristics were measured at 2 GHz...
We present the conductance properties of resonant tunneling heterostructures, laterally confined by a Schottky gate so that the confinement can be varied in a continuous and controlled way. Data on dots with nominal diameters in the submicron range are reported.
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