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Damage-free metal-assisted chemical etching (MacEtch) was used to fabricate InP junctionless FinFETs with ultra-high aspect ratio (∼ 45∶1) fins. For devices with Lg = 560 nm, 20 – 32 nm fin width, and 600 nm active fin height, Ion/Ioff ∼ 106, and near-ideal subthreshold swing (70 mV/dec) were achieved.
We investigated amorphous In2O3-Ga2O3-ZnO (a-IGZO) oxide semiconductor material as the active layer of TFTs. The top gate a-IGZO TFTs by using a conventional photolithography technique have good performance without an additional post annealing process. A 2.2- inch QQVGA AMOLED display was demonstrated by using a-IGZO TFT fabricated on glass substrate. The maximum process temperature is 200°C.
Electron-beam inspection (eBI) of the contact (CA) module for silicon-on-insulator (SOI) technology is discussed in this paper. Voltage contrast is used to detect CA opens in the SRAM and both CA opens and shorts in special test structures. The inspection is performed after the tungsten chemical mechanical planarization (W CMP) step. In-line transmission electron microscope (TEM) samples at select...
This paper presents a unique gate structure for reducing shorts between word lines on charge-trapping flash cell memory. In the early stage of developing sub-45 nm half-pitch word line by a self-aligned double patterning (SADP) technology, the cell array suffered from abnormal intrinsic word line-to-word line shorts, ca. 96.3% of the bridge rate on the 72 Mb cell memory, due to the formation of polysilicon...
This paper reports the successful fabrication of a field emitter array with a built-in multi-electrode lens, such as a quad-gate and a penta-gate FEA. The fabrication is based on an etch-back technique.
This publication presents a novel combination of nanoscale silicon field emitters fabricated by focused ion beam implant, subsequent etching and integrated extractor to carry MOSFET-controlled behavior required for future lithography applications. A control range of 2 decades is presented with up to 10 nA of emitted current per array at extraction voltages as low as 10 V. A special focus was put on...
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