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Direct patterning of silicon dioxide by electron beam lithography is used for the definition of metal nanojunction on wires fabricated on silicon on insulator (SOI) substrates. Devices based on a single silicon nanowire as small as 15 nm and several micrometers long are fabricated by means of a top down process based on electron beam lithography, silicon anisotropic etching and thermal oxidation....
In this work, we present a simple fabrication method of ion sensitive field effect transistor (ISFET) using cost effective equipments in a cleanroom laboratory environment. The ISFET has a structure similar to that of a metal oxide semiconductor field effect transistor (MOSFET) except without the metal layer on top of the gate oxide and uses silicon nitride insulating layer as the ion sensing material...
In this work we investigate device simulations for a sensitivity analyses on the PH25 single recess pHEMT process. The relation of the most critical process and epitaxial parameters on the electrical DC parameters are presented and discussed. The control of the recess etching is an important process module in stabilizing the electrical parameters. Improving the recess etching resulted in a significant...
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