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In this paper, we present the temperature dependent microwave noise measurements and modeling of AlGaN/GaN HEMTs on Si substrate over a wide temperature range from -50 to 200degC. The typical noise parameters including minimum noise figure (NFmin), noise equivalent resistance (Rn), optimum source reflection coefficient (Gammaopt) and associate gain (Ga) at different temperatures were measured and...
Effects of silicon nitride (SiN) surface passivation by plasma enhanced chemical vapor deposition (PECVD) on microwave noise characteristics of AlGaN/GaN HEMTs on high-resistivity silicon (HR-Si) substrate have been investigated. About 25% improvement in the minimum noise figure (NFmin) (0.52 dB, from 2.03 dB to 1.51 dB) and 10% in the associate gain (Ga) (1.0 dB, from 10.3 dB to 11.3 dB) were observed...
A nonlinear large-signal table-based model of AlGaN/GaN HEMTs that able to predict output nonlinearities including intermodulation distortions (IMD) is described. The equivalent circuit model elements of the dispersive model are derived from S-parameter and pulsed DC I(V) measurements. With proper data processing and implementation, the speed and accuracy of simulations under multi-tone excitations...
The influence of temperature on bias dependent small-signal equivalent circuit components of a resonant tunneling diode (RTD) is investigated from 290 K down to 15 K. The RTD model based on bias dependent parasitic elements and the quantum capacitance as well as the quantum conductance is fitted to both, on-wafer DC and RF S-parameter measurements from 45 MHz to 40 GHz over a bias range of 0 V to...
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