The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We have investigated the influence of the reverse transfer conductance Rgd to extract the small signal parameters of GaN high electron mobility transistors (HEMTs) at microwave frequencies. In this paper a simplified method for extracting the small-signal equivalent circuit elements of HEMTs by means of measurements of scattering parameters only is presented. We have calculated the improvement in...
Single-ended dual-fed distributed amplifier (SEDFDA) based balanced amplifier is analyzed and the layout is designed. The gate and drain artificial lines are realized with Composite Right-/Left-Handed (CRLH) phase shifters, having convenient topology for transistor connection. The amplifier design takes into account the catalog S-parameters of the transistors.
A new extraction approach of extrinsic parameters of GaAs/GaN HEMTs is present. This method is able to extract the extrinsic elements from just one set of S-parameters under weakly pinch off condition which biases the gate with a voltage slightly below the pinch off point, thus avoids any gate degradation and additional relationship for determining parasitic resistances in the conventional method...
An intrinsic small signal equivalent circuit of Cylindrical/Surrounded gate MOSFET is proposed. Admittance parameters of the device are extracted from the circuit analysis and intrinsic circuit elements are presented in terms of real and imaginary parts of the admittance parameters. S parameters are then evaluated and justified with the simulated data extracted from 3D device simulation. Y parameters...
AlN/GaN HEMT technology has made rapid progress over the past decade with problems such as high contact resistance and leakage currents being overcome to a certain degree. This paper presents DC and RF results for a short gate length, in-house fabricated AlN/GaN MOS-HEMT. The results indicate that problems with growth and passivation still exist. An extraction technique for small signal equivalent...
A new extraction method of the intrinsic parameters of the small-signal equivalent circuit model of SOI MOS transistors (MOSFET) is presented. This new method does not need the previous knowledge of the extrinsic series resistances, moreover, it is possible to directly determine the intrinsic parameters at the bias point of interest. Floating-Body SOI MOSFETs are analyzed using this method.
This paper describes the study of effect of variation of topological changes on parameters of pseudomorphic HEMTs. Devices with 2 gate fingers, having gate width of 150 ??m, source-drain spacing of 4 ??m and 3 ??m, and with two different gate structures, viz., ?? and T types were fabricated. On-wafer measurement of S-parameters for different devices was done from 100 MHz to 40 GHz under different...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.