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Increasing data needs much larger memory capacity. One of the Flash Memory Solution is Vertical NAND (V-NAND) Flash Memory. In order to fabricate this device, a high aspect ratio hole must be made in the channel hole through the etching process after multilayer thin film deposition. In order to obtain high aspect ratio etch, process condition should have high RF power, high flow rate of polymer gas,...
A novel anti-ESD RF SOI LIGBT with buried P-type layer (BPL) was proposed for improvement of its forward block characteristic. The proposed anti-ESD BPL RF SOI LIGBT consists of an additional buried P-type layer inserted between buried oxide layer and N-drift region based on the conventional RF SOI LIGBT structure and a built-in self-ESD-protection structure introduced in P-well region. When the proposed...
Two-port TEM cells with rectangular cross-section are commonly used to produce plane electromagnetic waves with high electric field. The non-uniformity of the system makes the use of numerical methods extremely useful in the design phase in order to achieve a very good behavior of the TEM cell over a wide frequency range of operation. In this paper an extended version of PEEC is used to study a real...
A Planar Ion Mobility Spectrometer (Planar-IMS) is based on ion gas-phase separation using their differing mobilities in high (20.000 V cm-1) and low (1.000 V cm-1) electric fields using a high-field asymmetric waveform. Simulation of acetone ions has been done for a micro Planar-IMS using COMSOL Multiphysics.
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