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Epoxy resin has become an integral part of electronic and electrical devices for their excellent mechanical and electrical performance. Nano-composite technology makes it possible to improve electrical properties of insulating materials. For the use of nanocomposites of epoxy resin, it must be confirmed whether the electrical performance with nanoparticles is different from that without nanoparticles...
The decomposition of high concentration pentachlorophenol (PCP) loaded on granular activated carbon (GAC) was studied by dielectric barrier discharge (DBD) plasma. The effects of discharge voltage, treatment time, gas kinds and flow rate on PCP degradation efficiency were discussed. The results indicated that increasing discharge voltage and treatment time could enhance the degradation efficiency...
Dielectric barrier discharge is vulnerable to ion bombardment, radical species or ultraviolet radiations that can be emitted by plasma filaments in air under atmospheric pressure. In our experiments, traces of degradation on the actuator surface can be observed by naked eye after the discharge operation. The degradation could come from the non-uniformity of the electric field. Despite the degradation...
The effect of gamma-ray irradiation on dielectric breakdown of polyphenylene oxide under magnetic field was investigated. The experiment was carried out by applying a dc pulse voltage under magnetic field. The magnetic flux density (MFD) of the magnetic filed was 495 mT. The samples were irradiated in air up to 100 kGy and then up to 1000 kGy with a dose rate of 10 kGy/h by using a 60Co gamma-source...
Current mode (CM) scheme provides suitable alternative for the high speed on-chip interconnect signaling. This paper presents a energy-delay optimization methodology for the current-mode (CM) signaling scheme. Optimization for the CM circuits for on-chip interconnects requires a joint optimization of driver and receiver device sizes, as their parameters which affect the energy-delay performance depend...
Polarities of plasma charging damage in n- and p-channel MOSFETs with Hf-based high-k gate stack (HfAlOx/SiO2) were studied for two different plasma sources (Ar-and Cl-based gas mixtures), and found to depend on plasma conditions, in contrast to those with conventional SiO2. For Ar-plasma, which was confirmed to induce a larger charging damage, both n- and p-ch MOSFETs with high-k gate stacks suffer...
The surface of various materials has been observed by optical reflection microscopy after exposure to the plasma generated in air at atmospheric pressure by a surface dielectric barrier discharge. The degradation of polymers (polymethyl methacrylate and polyvinyl chloride) has been characterized and differences appear between the two materials. A phenomenological interpretation is given. Borosilicate...
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