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This paper presents the use of innovative high-voltage SiC diode technology in the development of a user configurable full-wave or half-wave rectifier bridge. The devices are of merged Junction-Barrier-Schottky (JBS) type to enable for optimum performance even in the presence of current surges, as demanded by the application. To contain the cost of the proposed solution, their packaging relies on...
In this paper different gate drive concepts to eliminate parasitic turn-on for SiC MOSFETs are discussed. Experimental results show a potential for lowering switching losses of SiC MOSFETs during fast switching operation, reduction of turn-off overvoltage across the bodydiode. Finally increased requirement on the gate drive unit are discussed.
The surge current capability of the body-diode of SiC MOSFETs is experimentally analyzed in order to investigate the possibility of using SiC MOSFETs for HVDC applications. SiC MOSFET discrete devices and modules have been tested with surge currents up to 10 times the rated current and for durations up to 2 ms. Although the presence of stacking faults cannot be excluded, the experiments reveal that...
The use of a model predictive control algorithm to reduce the losses in a 3L-NPC inverter with SiC neutral point diodes was investigated. It considers the reduced switching losses associated with the commutations that involve a SiC diode. A loss reduction of 5% is achieved compared to a standard sine-triangle modulation.
This paper discusses an elaborated study about the design of Junction-Barrier Schottky (JBS) diodes regarding the width (w) and spacing (s) of the implanted p+ pattern, utilizing epitaxial drift-layer specifications (4H-SiC) suitable for 1.7 kV applications. The impact of the w/s design-ratio on the blocking characteristics, the unipolar ON-state performance as well as moderation of surge current...
In this paper, the application of a combined high temperature (1550°C) thermal oxidation / annealing process has been applied to 4H-SiC PiN diodes with 110 µm thick n-type drift regions, for the purpose of increasing the carrier lifetime in the semiconductor. PiN diodes were fabricated on lifetime-enhanced 4H-SiC material, then were electrically characterised and compared against fabricated control...
SiC technology is attractive for power devices, as it potentially offers many advantages over traditional Si-based devices. However, many issues still need to be properly addressed in order to become a popular and cost-effective alternative to Si devices. One of these issues are high-frequency oscillations that appear during commutation, which limit the switching speed of the device and can produce...
The implementation of an interleaved boost converter (IBC) using SiC diodes for photovoltaic (PV) applications is presented in this paper. The converter consists of two switching cells sharing the PV panel output current. Their switching patterns are synchronized with 180° phase shift. Each switching cell has a SiC Schottky diode and a CoolMOS switching device. The SiC diodes provide zero reverse-recovery...
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