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This paper introduces a control method for Reverse-Conducting (RC-)IGBTs which reduces the control dead time of RC-IGBT inverters. Switching measurements with 6.5 kV RC-IGBTs concerning the applicability of the introduced control method and the effect of a load current direction change during the desaturation pulse are presented.
In operation of series-connected IGBTs a voltage balancing is necessary, during short circuits it is even more important. Within this paper the behavior of series-connected IGBTs and diodes during the short-circuit type 2 and 3 is analyzed. The dv/dt during the short circuit is determined by one of two equivalent circuit capacitances. One is the plasma capacitance and the second one is the Miller...
In this paper, the effect of different stray inductances on the performance of various combinations of different types of IGBTs and freewheeling diodes was studied. Therefore, a fast switching IGBT4 HighSpeed was combined with either a SiC Schottky diode or a Si bipolar diode. It was analyzed how the switching losses are affected by the type of the freewheeling diode, the stray inductance and to what...
This paper discusses an elaborated study about the design of Junction-Barrier Schottky (JBS) diodes regarding the width (w) and spacing (s) of the implanted p+ pattern, utilizing epitaxial drift-layer specifications (4H-SiC) suitable for 1.7 kV applications. The impact of the w/s design-ratio on the blocking characteristics, the unipolar ON-state performance as well as moderation of surge current...
In this paper an Active Voltage Control (AVC) technique is presented, for series connection of insulated-gate-bipolar-transistors (IGBT) and control of diode recovery. The AVC technique can control the switching trajectory of an IGBT according to a pre-set reference signal. In series connections, every series connected IGBT follows the reference and so that the dynamic voltage sharing is achieved...
Lifetime of power electronics is seriously limited by the thermal ambience and therefore a detailed thermal design on power electronics is desirable. For evaluating the lifetime of power electronics, information is required on the thermal cycling of the power electronics components. Especially the semiconductors are vulnerable to a high temperature and thermal cycling. In this paper the combined modeling...
The power electronics circuits are seriously limited by the thermal ambience and therefore a detailed thermal design on power electronics is desirable. Especially the semiconductors are vulnerable to a high temperature and thermal cycling. The overview of power semiconductors switches as an effects of temperature are shown in this paper. In this paper the combined modeling and simulation of electrical...
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