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The turn-around effect of the threshold voltage shift during hot-carrier stress has been investigated. Such a phenomenon is explained by the interplay between interface states and oxide traps, i.e. by the compensation of the rapidly created oxide charges by the more slowly created interface states. To prove this idea, a refined extraction scheme for the defect distribution from charge-pumping measurements...
The reliability of advanced embedded non-volatile memories has been discussed using the 2T-FNFN devices example. The write/erase endurance and the data retention are the most important reliability parameters. The intrinsic reliability mechanisms can be addressed through single cell evaluation, while the cell-to-cell variation determines the product level reliability. The cell-to-cell variation can...
Reliabilities of high-k stacked gate dielectrics are discussed from the viewpoint of the impact of initial traps in high-k layer. TDDB reliability can be explained by the generated subordinate carrier injection (GSCI) model. While initial traps increase the leakage current, they do not degrade the TDDB reliability. In contrast, the BTI reliability is strongly degraded by initial traps.
Since the very beginning of the flash memory era, the market has been dominated by the floating gate technology. However, as floating gate flash continues along a very steep scaling path, more and more barriers start to appear, limiting further scaling possibilities of the technology. At the same time, other concepts are preparing to take over. This paper concentrates on the prospect of high-k materials...
Simple ring-oscillator circuit has been used to estimate the degradation in circuit performance due to negative bias temperature instability (NBTI) effect but it fails to isolate the degradation from the NBTI for PMOS and the positive bias temperature instability (PBTI) for NMOS in high-K dielectric/metal gate CMOS technology. In this paper, we propose new circuit structures which monitor the NBTI...
The electric field dependence of the charge build-up mechanisms and its correlation to breakdown phenomena in thin oxides during Fowler-Nordheim electron injections has been investigated. The charge to breakdown decrease versus the electric field has been quantitatively attributed to the increase of the trapping efficiency, for various oxide thicknesses ranging between 5.5 nm and 10 nm. A relationship...
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