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Aluminum electrolytic capacitors (AECs) are widely used in power electronic converters for filtering, buffering, bypass and storage purpose. Typical service life of AECs varies between 1,000 to 12,000 hours at rated condition. Operational life of these capacitor decreases due to various electrical and environmental parameters, thereby limiting the life of the converter system. Typically, capacitors...
Two types of failures in solid tantalum capacitors, catastrophic and parametric, and their mechanisms are described. Analysis of voltage and temperature reliability acceleration factors reported in literature shows a wide spread of results and requires more investigation. In this work, leakage currents in two types of chip tantalum capacitors were monitored during highly accelerated life testing (HALT)...
The high reliability and long life characteristics of electronic products result in long degradation test time and low efficiency. Traditional degradation test depends on priori information and statistical analysis method is complex. In view of those problems, an evaluation method of step-down stress accelerated degradation modeling based on Gamma process is proposed. Firstly, the degradation path...
Charge-pumping boost driver (CPBD) with electric double-layer capacitors (EDLCs) was proposed by the author. CPBD has advantages over conventional drivers. However, CPBD comprises a charge circuit, including an inductor to charge the EDLCs, which increases size and cost of CPBD. This problem led to the proposal of noncharge-circuit charge-pumping boost driver (NCPBD) with EDLCs. NCPBD can be realized...
The reliability of advanced embedded non-volatile memories has been discussed using the 2T-FNFN devices example. The write/erase endurance and the data retention are the most important reliability parameters. The intrinsic reliability mechanisms can be addressed through single cell evaluation, while the cell-to-cell variation determines the product level reliability. The cell-to-cell variation can...
Since the very beginning of the flash memory era, the market has been dominated by the floating gate technology. However, as floating gate flash continues along a very steep scaling path, more and more barriers start to appear, limiting further scaling possibilities of the technology. At the same time, other concepts are preparing to take over. This paper concentrates on the prospect of high-k materials...
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