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The improvement in reverse recovery of power NPN bipolar transistor (BJT) through incorporation of ''universal contact'' in the base is studied in detail. It is shown that use of universal contact allows redistribution of base current in saturation from collector region where recombination lifetime is high to extrinsic base region where effective recombination lifetime is low. The reverse recovery...
The use of p + n + universal contact for improving switching performance in diodes is studied in detail. A theoretical framework is described which shows that the incorporation of universal contact either at the end of the lightly doped region or in the injecting p or n regions of the diode can all be viewed as an attempt to reduce the effective minority carrier lifetime in the diode...
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