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A two-level simulation methodology for coupled-oscillator systems is presented. The inner level corresponds to the harmonic-balance analysis of the elementary oscillator in free-running regime, so as to obtain a one-port reduced-order model. The outer level corresponds to the analysis of the coupled system, deriving a formulation that explicitly relates the oscillation-frequency deviation and the...
This paper presents a rigorous numerical approach to the assessment of electro-thermal instabilities arising in high-power semiconductor devices operating under time-periodic conditions. The methodology is entirely developed in the frequency domain with reference to the Harmonic Balance technique, i.e. no time-domain calculations are required for the determination of the Floquet multipliers exploited...
This paper presents a rigorous numerical approach to the assessment of electro-thermal instabilities arising in high-power semiconductor devices operating under time-periodic conditions. The methodology is entirely developed in the frequency domain with reference to the harmonic balance technique, i.e. no time-domain calculations are required for the determination of the Floquet multipliers exploited...
The paper presents a detailed study on the idle leakage reduction techniques on partially depleted silicon-on-insulator (PD-SOI) CMOS SRAM. The most promising leakage reduction techniques that have been proposed are introduced, analyzed and compared into 65 nm low-power PD-SOI technology, taking into account all the SOI specific effect. Especially, it is shown that the leakage reduction techniques...
Contact-less electrical energy transmission over a large air gap becomes more and more attractive for different applications. In certain applications, the stability of detachable transformers is of vital concern to maintain the stabilization of the whole system. This paper investigates the influence of horizontal and vertical displacement of primary system as well as transmission frequency on coupling...
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