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Interconnect opens are known to be one of the predominant defects in nanoscale technologies. Automatic test pattern generation for open faults is challenging, because of their rather unstable behavior and the numerous electrical parameters which need to be considered. Thus, most approaches try to avoid accurate modeling of all constraints like the influence of the aggressors on the open net and use...
Open defects such as interconnect opens are known to be one of the predominant defects in nanoscale technologies. Yet, test pattern generation for open defects is challenging because of the high number of parameters which need to be considered. Additionally, the assumed values of these parameters may vary due to process variations reducing fault coverage of a test set generated under this assumption...
Interconnect opens are known to be one of the predominant defects in nanoscale technologies. However, automatic test pattern generation for open faults is challenging, because of their rather unstable behaviour and the numerous electric parameters which need to be considered. Thus, most approaches try to avoid accurate modeling of all constraints and use simplified fault models in order to detect...
The FinFET technology is considered as the best candidate to extend the CMOS technology down to 10 nm. In this paper, a three-dimensional (3-D) parasitic extraction flow is proposed for modeling and timing analysis of the FinFET based circuits. The flow fully considers the 3-D geometry of the FinFET and employs accurate field solvers for extracting resistances and capacitances. Thus, it accurately...
Transient faults have become increasingly observable in combinational logic. This is due to the weakening of some inherent protective mechanisms that logic traditionally holds against such flawed spurious events. One of the aforementioned mechanisms relates to the propagation of transient faults along sensitizable paths. Existing literature that relies on logic simulation under estimates the number...
This paper proposes a new approach to analyze crosstalk of coupled interconnects in the presence of process variations. The suggested method translates correlated process variations into orthogonal random variables by principle component analysis (PCA). combined with polynomial chaos expression (PCE), the technique utilizes Stochastic Collocation Method (SCM) to analyze the system response of coupled...
A novel methodology for accurate and efficient static timing analysis is presented in this paper. The methodology is based on finding a frequency domain model for the gates which allows uniform treatment of the gates and interconnects. It is shown that despite the highly nonlinear overall gate model, a frequency domain model of the gate with the model parameters, gate moments, as functions of the...
The power consumption and the matching will be the principal issues at the 32 nm node and below. In this context, Ultra-Thin Body devices are extensively studied for the end-of-roadmap CMOS. In this paper we present the SON technology, leading to the simple fabrication of sustained mono-Si nano-membranes over an empty tunnel, and discuss on the application of this process to build-up electronic devices...
Novel 3D stacked gate-all-around multichannel CMOS architectures were developed to propose low leakage solutions and new design opportunities for sub-32 nm nodes. Those architectures offer specific advantages compared to other planar or non planar CMOS devices. In particular, ultra-low IOFF (< 20 pA/mum) and high ION (> 2.2 mA/mum) were demonstrated. Moreover, those transistors do not suffer...
The signal integrity of VLSI circuits is an emerging concern in high performance integrated circuits. A previous RLC crosstalk noise expression we have submitted, based on a RLC transmission line model associated with each propagation mode, could predict the noise amplitude of an RLC interconnect, yet only by making the assumption of a perfect symmetry between the two coupled lines and their respective...
In deep submicron era, to prevent larger amount of SRAM from more frequently encountered overheating problems and react accordingly for each possible hotspots, multiple ideal run-time temperature sensors must be closely located and response rapidly to secure system reliability while maintaining core frequency. This paper presented a method to extract run-time temperature information from multiple...
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