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As the feature size of interconnect technology continues to scale down to nanometer sizes, the state-of-the-art Cu interconnect is expected to run into its physical limit in the near future. Carrier scattering at surfaces and grain boundaries leads to a dramatic increase of Cu resistivity at the nanoscale, resulting increasing resistance capacitance signal delay. The Cu interconnect is becoming more...
Carbon-nanotube (CNT) cathode has promising applications in high-frequency electron and display devices due to its good field-emission performance. The field-emission performance of CNTs with a pulse driving mode is studied both by theoretical analysis and experiments. The impulse responses of a field-emission diode with different external resistance and input voltage are investigated. From the simulations...
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