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In this letter, a fully-integrated RF-DC converter operating at the HF RFID working frequency (13.56 MHz) and realized in 350 nm CMOS technology is presented. It is based on a Dickson's rectifier, a Pelliconi's charge pump driven by a 50 kHz ring oscillator, and a voltage monitor. Mathematical model is developed and verified through simulations and measurements. Results show a sensitivity of −19 dBm...
The purpose of this paper is to explore power harvesting capabilities in nanometer technology. Novel charge pump improvements using the back-gate or well of MOS devices improve efficiency as well as sensitivity. The proposed circuits are implemented in 90 nm CMOS. Measured performance will be provided.
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