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Four new CMOS inverter-based voltage multipliers consisted of PMOS/NMOS pass transistors, inverter circuits, and capacitors are proposed in the paper. The proposed voltage multipliers which combine the functions of rectifiers and charge-pumps improve the power conversion efficiency and reduce the number of passive components therefore they are suitable for the integration. The voltage multiplier with...
In this paper, we present an improved charge pump circuit for the non-volatile memories in RFID tags. The circuit consists of a single pumping branch without auxiliary capacitors and operates with a simple two-phase clock. The internal high voltages are used to control the gate and bulk terminals of the charge transfer switch. As a result, the threshold voltage loss and the leakage currents are eliminated...
A high voltage charge pump design is being presented in this paper. The design is based on Dickson charge pump, constructed with diodes by using AMS 0.35μm technology. The innovation is made in Dickson charge pump i.e. charge control PMOS transistor is used in each stage of charge pump. PMOS transistor is used in series with charging capacitor which reduces the power consumption during the clock transition...
This paper presents a new cross-coupled charge pump structure which generates 2Vdd output and applies to flash memory. Compared with conventional structures, the novel scheme has lower ripple voltage, and higher efficiency. These advantages were achieved by employing the methods of reducing power loss effectively. The proposed charge pump was fabricated with TSMC 0.18 μm CMOS process. By the simulation...
A multi-modes regulated charge pump with improved efficiency over wide input and load range is proposed in this paper. The output voltage is regulated to 5 V when input is 4.5-2.7 V. By alternating the switch network, it can realize 2x, 1.5x, and 1.33x conversion modes, which improves the efficiency over wide input range. During each mode, the output voltage is regulated by a controlled current source...
This article present the CMOS charge pump circuit which is operated in current mode. MOS transistors in this circuit act as the switches (charge transfer switch) and current source for store the charge from the supply voltage into the fly capacitor and transfer charge from the fly capacitor to the output (output capacitor and resistive load). All of the MOSFET which act as switch operated in saturation...
In conventional CMOS charge pump circuits, there are some non-ideal effects such as the clock feedthrough, current mismatch and charge sharing which result in a phase offset in phase-locked loop circuits. This paper presents a new charge pump to reduce the jitter. The proposed and conventional charge pumps are simulated and compared. The circuit is implemented using a 0.35??m mix-signal CMOS process...
A low power charge pump that recycles the wasted charges is described. CMOS switched Dickson charge pump cannot accommodate charge recycling since charges are leaking from the boosted supply (VPP) back to the external supply (VDD) during the recycling period. Given power constraints, the proposed 2-stage cross-coupled pump with leak-back current suppression can provide the current 5 times higher than...
A Cockcroft-Walton type charge pump circuit is proposed in this paper. Compared with Dickson type, each transistor and capacitor in the proposed circuit just stand against the voltage less than one Vdd, so that a low break-down voltage process can be applied to this kind of charge pump to reduce the chip area cost and break-down risk. By using the proposed structure, the performances of voltage boosting...
The operating range of passive UHF transponder systems is largely determined by the tag current consumption and the rectifier efficiency. Reading ranges of several meters have recently been reported for many state of the art RFID (Radio frequency IDentification) tags [1]. At this distance, the main issue for the rectifier design is the low amplitude of the high frequency antenna signal. Schottky diodes...
In this work, the design of a Time-to-Digital Converter (TDC) for measuring the time-of-flight (ToF) of a radio pulse is described. It consists on two blocks: a time-to-voltage transducer, whose scheme is that of a charge pump, designed using a 0.25 mum CMOS process, and an incremental first order sigma-delta (SigmaDelta) converter. The two blocks are connected together by means of a sample and hold...
An area efficient switched capacitor charge pump based 2ntimes voltage converter constructed by cascading n units of identical cells with cross-coupled charge pump is proposed and is implemented with a boosting dynamic circuit to provide level shifting. The proposed charge pump can be implemented using standard high-voltage CMOS process. Simulation result of a 4times charge pump based on 0.35 mum...
A new charge pump circuit with a clock that shows an increased clock voltage as its stage is increased is proposed in the paper. The charge pump circuit utilizes the cross-connected NMOS, voltage doubler, as a pumping stage. Each stage of the voltage-doubler provides a pair of complementary clock voltages. The clock voltage also increases as the stage of voltage doubler is increased. It shows that...
In this paper we are addressing power efficiency and output ripple of an embedded switched-capacitor based DC/DC Buck Converters. Here we propose to use current pump based switched-capacitor circuit in buck converter. The current pump circuit limits transition current of the switched-capacitors and hence, improves power efficiency and reduces output ripple. We have also proposed an equivalent macro...
In this paper, we present a new charge pump circuit feasible for the implementation with standard twin-well CMOS process technology. The proposed charge pump employs PMOS-switching dual charge-transfer paths and a simple two-phase clock. Since charge transfer switches are fully turned on during each half of clock cycle, they transfer charges completely from the present stage to the next stage without...
The purpose of this paper is to explore power harvesting capabilities in nanometer technology. Novel charge pump improvements using the back-gate or well of MOS devices improve efficiency as well as sensitivity. The proposed circuits are implemented in 90 nm CMOS. Measured performance will be provided.
The paper presents a low-threshold voltage multiplier circuit that can be used for harvesting energy from ambient radio-frequency (RF) signals. At the core of the circuit is a charge-pump based on CMOS floating-gate transistor diodes (FGTD) whose threshold voltage can be adjusted using indirect programming. We show that the diodes can achieve threshold voltages less than 50 mV, which is typically...
In the paper a circuit implementation of CMOS voltage controlled oscillator is presented. The most interesting feature of the presented proposal is extreme low voltage suitability, because CMOS inverters are used as main building blocks. The simulation results with real foundry parameters are also included.
The paper summarizes a concept of CMOS implementation of a new asynchronous sigma-delta modulator, based exclusively on CMOS inverters (or similar two-transistor blocks) as building blocks. The proposed a SigmaDelta-modulator is extremely suitable for low voltage operation and is fully compatible with digital CMOS, since there are only two transistors stacked in between supply rails. Circuit diagrams...
In this paper, a regulated dual phase charge pump with switched-capacitor voltage reference is presented. This charge pump uses a dual phase technique to reduce the output ripple and combines the switch-capacitor CMOS voltage reference to diminish the chip area and quiescent current. This charge pump provides output voltage 5 V and maximum load current 5 mA with the constant frequency regulation....
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