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We fabricated Nitrides-based THz-QCL structure grown on GaN substrate. The Output power for QCL on GaN substrate showed ten times higher value than that of QCL on MOCVD-GaN template. We for the first time observed THz spontaneous emission spectrum on the Nitrides-based THz-QCL on injection current.
We demonstrated 222-282 nm AlGaN and InAlGaN-based efficient deep-ultraviolet (DUV) light-emitting diodes (LEDs) fabricated on low threading dislocation density (TDD) AlN. We achieved over 10 mW CW UV output power for 264-282 nm LEDs.
Nitride blue lasers including an AlInN cladding lattice matched to GaN were fabricated. Lasing at 415 nm is observed at 300 K with a threshold current density of 7.5 kA/cm2 and a peak power of 140 mW at 1.2 A.
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