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We demonstrated AlGaN-based multi-quantum-well (MQW) deep-ultraviolet (UV) light-emitting diodes (LEDs) with wavelengths in the range of 222-351 nm, fabricated on low threading dislocation density (TDD) AlN template on sapphire. A high internal quantum efficiency (IQE) of 50-80% was achieved from AlGaN or quaternary InAlGaN MQWs by fabricating them on low TDD AlN templates. Also, an electron injection...
We demonstrated 222-282 nm AlGaN and InAlGaN-based efficient deep-ultraviolet (DUV) light-emitting diodes (LEDs) fabricated on low threading dislocation density (TDD) AlN. We achieved over 10 mW CW UV output power for 264-282 nm LEDs.
AlGaN-based multiple-quantum-well light-emitting diodes (LEDs) with peak emission at UV-C region of 264 nm were successfully gown on AlN template using metal organic chemical vapour deposition. It was found that a subband emission around 320 nm can be drastically reduced by inserting a thin 1 nm-thick AlN interlayer between the active region and p-type layers. This is presumably a result of the suppression...
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