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A two-stage AlGaN/GaN MMIC on high pure SiC (HP-SiC) substrate for X band frequency was designed and manufactured. The MMIC had a CW output power of over 10W, 12dB power gain from 9.1GHz to 10.GHz and with a gain flatness of 0.3dB.
This paper describes efficient GaN/AlGaN HEMTs and MMICs for L/S-band (1-4 GHz) and X-band frequencies (8-12 GHz) on three-inch s.i. SiC substrates. Dual-stage MMICs in microstrip transmission-line technology yield a power-added efficiency of ??40% at 8.56 GHz for a power level of ??11 W. A single-stage MMIC yields a PAE of ??55% with 6 W of output power at VDS= 20 V. The related mobile communication...
X-Band AlGaN/GaN HEMT power MMIC on Sl-SiC designed in microstrip technology is presented in this paper. Recessed-gate and field-plate are used in the device process to improve the AlGaN/GaN HEMTs performances. S-parameter measurements show a strong dependence of the frequency performances of the AlGaN/GaN HEMTs on the operating voltage. Higher operating voltage is key to get higher power gain for...
A V-band push-push GaN monolithic microwave integrated circuit voltage controlled oscillator (VCO) has been realized based on a 0.2 mum T-gate AlGaN/GaN high electron mobility transistor technology with an fT ~ 65 GHz. The GaN VCO delivered an output power of +11 dBm at 53 GHz with an estimated phase noise of -97 dBc/Hz at 1 MHz offset based on on-wafer measurement. To the best of our knowledge, this...
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