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The Si substrate of GaN-on-Si wafers offers new opportunities to increase the functionality and performance of nitride-based devices. This paper will review three examples of these new devices/systems. First, GaN-on-Si substrates allow the on-chip heterogeneous integration of GaN and Si electronics. Second, the easy removal of the Si substrate through dry or wet etching gives access to the N-face...
Gallium Nitride HEMT transistors are the future solid state technology that is presently advancing the performance of state-of-the-art RF power amplifiers from HF frequencies through low mmW applications. Further developments in the basic HEMT material structure, including the choice of substrate, will continue to push the RF performance, output power, frequency response, and bandwidth; availability;...
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