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In conclusion, we report the successful realization of N-face polarization-doped QW UV LEDs. Electroluminescence from AlGaN regions indicates that AlχGai.χN QWs and AlyGaι.yN barriers can now be used to obtain respectable emission intensities for deeper UV or higher energy photons. A number of advantages of N-face optoelectronic devices p-type polarization doping, and better electron and hole injection...
We demonstrated 222-282 nm AlGaN and InAlGaN-based efficient deep-ultraviolet (DUV) light-emitting diodes (LEDs) fabricated on low threading dislocation density (TDD) AlN. We achieved over 10 mW CW UV output power for 264-282 nm LEDs.
There is interest in developing more stable contacts to a variety of GaN-based devices. In this paper, we give two examples of devices that show improved thermal stability when boride or Ir diffusion barriers are employed in ohmic-contact stacks. AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated with Ti/Al/X/Ti/Au source-drain ohmic (where X is or Ir) contacts and were subjected...
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