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Compared with Ti/Al/Ni/Au Ohmic contacts, Ti/Al/Ti/Al/Ti/Al/Ti/Al/Ti/Al/Ni/Au with multiple Ti/Al stacks improved the thermal stability. Multiple-stacked Ohmic contacts showed lower degradation during long-time thermal aging at 600°C. The samples after degradation were tested with Transmission Electron Microscopy (TEM) to research the structural reasons. TEM results show that multiple stacks can avoid...
There is interest in developing more stable contacts to a variety of GaN-based devices. In this paper, we give two examples of devices that show improved thermal stability when boride or Ir diffusion barriers are employed in ohmic-contact stacks. AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated with Ti/Al/X/Ti/Au source-drain ohmic (where X is or Ir) contacts and were subjected...
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