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Microwave low-noise performance AlGaN/GaN HEMT on a SiC substrate with a wide head double-deck T-shaped gate has been reported. The HEMTs with gate-length ($L_{\mathrm { {g}}})$ of $0.17~\mu \text{m}$ and source–drain spacing ($L_{\mathrm { {sd}}})$ of $3.5~\mu \text{m}$ exhibited a maximum extrinsic transconductance of 360 mS/mm, a current gain cutoff frequency ($f_{\mathrm { {T}}})$ of...
AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) with thick (>30 nm), high-κ (TiO2/NiO), submicron-footprint (0.4 µm) gate dielectric on SiC substrate are demonstrated, which are found to exhibit low gate leakage current (∼ 1 nA/mm of gate periphery), high IMAX (1 A/mm), and high drain breakdown voltage (188 V). The derived current gain cutoff frequency is 30 GHz...
This paper describes DC characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on a free-standing GaN substrate. The three terminal breakdown voltage of the fabricated HEMT with a gate length of 3 µm exhibited a linear increase with increasing the gate-to-drain distance (Lgd), reaching more than 1200 V at Lgd=25 µm. It was found that the ON/OFF ratio in the drain current...
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