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Transition metal oxide (TMO) resistance random access memory (RRAM) is considered a promising candidate for future non-volatile memory application for fast switching speed, long retention time and superior scaling properties. In order to satisfy product requirements, elimination of the electroforming process of fresh RRAM device, sufficient program/erase voltage margin, and low power consumption are...
In this study, we report on the experimental results of ultrathin TbFeCo films fabrications. The effects of annealing conditions on the magnetic characteristics of ultrathin TbFeCo magnetic films with various under- and capping-layers were explored. The effects of using SiNx, Al and Ti as capping- and under-layers are also investigated. We found that in contrast to the flat surface of SiN, the rugged...
DC and RF characteristics of Si/SiO2(~4 mum)/Ti/Pt-HfO2-Al metal-insulator-metal (MIM) devices were investigated with atomic layer-deposited (ALD) high-k HfO2 films. Excellent DC and RF properties were obtained compared to those using either SiO2 or Si3N4. Both high capacitance density and small frequency-dependent capacitance reduction were observed in the MIM capacitors, in which ALD HfO2 was used...
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