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In this paper we report on the use of Silicon wafer to wafer bonding technology using Trough Silicon Vias (TSV) and Cu to Cu hybrid interconnects. We demonstrate that multiple wiring levels of two separate wafers, can be interconnected on a full wafer scale by means of wafer bonding using classical metallization schemes found in IC's such as Al and Cu interconnect technologies. The wafer to wafer...
In-situ observation of stress in Al interconnects under electromigration and thermal effect by using the synchrotron radiation x-ray diffraction. The test temperature was controlled by changing the current density of W (self-heating structure). The EM-induced stress was also investigated with current densities from 3times105A/cm2 to 4times106A/cm2. The conclusion agreed well with the simulation results.
In the semiconductor industry to increase the power density, improve the electrical performances and optimize the robustness in the application, more and more key roles are covered by back-end processes and in particular by bonding technology used to connect power silicon chip and metallic leadframe that for Power devices is one of more impacting process. The performed studies, evaluations and production...
The request of the electronic market to increase the working temperature of power integrated circuits up to 180-200degC has a big impact on the reliability of standard plastic packages. The joint between bonding ball and pad is mainly affected in conditions of high temperature and high current. Various solutions were tried in order to reach the target with standard interconnection solutions. If Au...
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