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This paper presents the results of a numerical analysis on the electrical interconnect options of a Power QFN (PQFN) package, to explore and compare the RDS(ON) performance at DC condition. The modeling involves the PQFN 5mm × 6mm package which initially uses Aluminum wire bonds for interconnection. Competition in the market in terms of better electrical performance packages challenge semiconductor...
Copper (Cu) wire bonding is getting more common as interconnections on aluminium (Al) bond pad metallization in microelectronics due to lower cost compared to gold wire bonding. The Cu-Al intermetallic compounds (IMC) growth in Cu ball bonds has been investigated by many researches but the understanding of the IMC phases is still incomplete and the impact to bond reliability know-how is limited. This...
Increasing cost of gold (Au) for bonding wires and decreasing die and, therefore, bond pad size raise the demand for alternative bonding wire materials. A cheap alternative with good electrical conductivity is copper. Cu wire is harder than gold and aluminium. The material itself shows a pronounced strain hardening, so that the hardness increases significantly during ball bonding. These mechanical...
The request of the electronic market to increase the working temperature of power integrated circuits up to 180-200degC has a big impact on the reliability of standard plastic packages. The joint between bonding ball and pad is mainly affected in conditions of high temperature and high current. Various solutions were tried in order to reach the target with standard interconnection solutions. If Au...
The presentation addresses the reliability of Au ball bonds of different Au wire qualities on Al chip metallizations of different thicknesses and compositions at temperature storage from 100 to 200degC up to 4000 h. In this context the interfacial reactions and intermetallic phase coverage directly after the bonding process was optimized to get the best starting condition for phase growth at elevated...
The story of copper wire has existed for decades, and it always looked to be a very promising material. However, despite all of its positive properties copper bonding wire never managed to find such a wide use as did gold wire. In recent years many semiconductor manufacturers made great efforts to replace gold with copper wire. Driving forces are the high gold price and some design benefits due to...
The replacement of Au and Al wires with Cu wires in wire bonding has become an emerging trend in IC packaging nowadays. Although some research works have been carried out for the applications of Cu wire bonding, they are mainly focused on the processing and material issues of Cu wire bonds. However, the Cu in the wire bonds may diffuse into the Si chip and impose reliability threats to the silicon...
In this paper, thermal cycling reliability along with ANSYS analysis of the residual stress generated in heavy-gauge Al bond wires at different bonding temperatures is reported. 99.999% pure Al wires of 375 mum in diameter, were ultrasonically bonded to silicon dies coated with a 5mum thick Al metallisation at 25degC (room temperature), 100degC and 200degC, respectively (with the same bonding parameters)...
Summary form only given. 1st the Paper gives a short overview on the history and development of electroless NiAu as low cost bumping technology in industry. The applications in the first phase of production implementation of electroless Ni/Au were focused on wafers with Al-Pads and Ni/Au as UBM or bump material. The second phase of implementation is focusing on low k wafers with copper pad metallization,...
Summary form only given. The conventional wire bonding has employed gold and aluminum wires as interconnection material for decades. With the requirements for high speed, high power and fine pitch applications, copper is emerging as the alternative bonding wires to replace gold and aluminum. In principle, copper has relatively good electrical mechanical and thermal properties. However, copper is known...
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