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In this article the design, fabrication and test of X-band and 2-18 GHz wideband high power SPDT MMIC switches in GaN technology are presented. Said switches have demonstrated state-of-the-art performance and RF fabrication yields better than 65%. In particular the X-band switch exhibits an on-state power handling capability of better than 37 dBm at the 1 dB insertion loss compression point and the...
AIGaN/GaN HEMT power MIMIC which is designed in microstrip technology on Sl-SiC substrate is presented in this work. The chip size is only 2.0 mmtimes1.1 mmtimes0.08 mm. The developed two-stage power MMIC operates at frequency between 9.4-10.6 GHz and delivers a pulsed output power of 11.1 W at 9.7 GHz under a drain bias of 30 V. The linear gain of the MMIC is about 10 dB which is much lower than...
High power amplifiers for a next generation of T/R-modules for future X-band active array antennas are realized on the bases of novel AlGaN/GaN HEMT structures, which are epitaxially grown on SiC wafer substrates. Both, hybrid and monolithically integrated circuits are designed and realized as key elements for transmit chains. Based on hybrid designs excellent peak power levels of 23 W (43.6 dBm)...
AlGaN/GaN-based HEMT MMICs on s.i. SiC wafer substrates are designed and realized for linear broadband amplifiers. Electrical performance data and assembly technology issues are presented in this paper. The linear broadband amplifier MMIC operates in the frequency range from 9 GHz to 19 GHz and is fabricated in microstrip technology including via-holes. The measured small signal gain is about 13 dB...
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