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AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) with a liquid phase deposited (LPD) ZrO 2 thin film as gate insulator was fabricated. Compared with the conventional HEMT, the maximum drain current increases from 492 to 627 mA/mm, and leakage current is four orders magnitude lower. The gate swing voltage and off-state breakdown were also improved while applying...
SrTiO 3 thin films were deposited on AlGaN/GaN wafer by a simple, low-temperature liquid-phase deposition (LPD) method, and applied as the gate dielectric in metal oxide semiconductor high electron mobility transistor (MOSHEMT). X-ray diffraction and electrical characteristics were measured to investigate the film phase and leakage current. AlGaN/GaN MOSHEMTs with 20nm-thick SrTiO 3 ...
Direct oxidation of composite Ni/Ti metal film structure for AlGaN/GaN MOSHEMT has been successfully demonstrated. In comparison with normal HEMT with Schottky-gate, transistors fabricated with this novel process exhibit three orders of magnitude reduction in gate leakage current, superior breakdown voltage (V br =471V vs. 88V for normal HEMT) and electrical stability (∼0.3% electric field...
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