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A five-stage linear low-noise uniform traveling wave amplifier (L2NTWA) design fabricated in an AlGaN/GaN 0.25µm monolithic microwave integrated circuit (MMIC) process is presented. The amplifier exhibits a bandwidth of 10 MHz − 6.5 GHz at a constant gain of 15 dB and a minimum NF of 1.5 dB. For small-signal operation only, an on-chip active cold load (ACL) can be optionally connected by a bond-wire...
This paper reports on a wide bandwidth monolithic power amplifier suitable for wide bandwidth applications up to the Ka-band such as electronic warfare systems. The MMIC is based on a 100nm AlGaN/GaN T-gate HEMT microstrip transmission line technology with an fT > 80 GHz. The designed and fabricated amplifier uses the non-uniform distributed power amplifier topology and covers a frequency range...
This paper reports on a novel broadband amplifier architecture suitable for wide bandwidth applications such as electronic warfare systems. The proposed topology comprises a distributed active power splitter to function as a driver stage for a reactively-matched power amplifier. As a result, a purely resistive interstage impedance is obtained and therefore the proposed architecture allows wider bandwidth...
This paper reports on two wide bandwidth monolithic power amplifiers suitable for electronic warfare (EW) systems and other wide bandwidth applications up to the Q-band. The MMICs are based on a 100nm AlGaN/GaN T-gate HEMT microstrip transmission line MMIC technology with an fT > 80 GHz. Both designed and fabricated amplifiers use the non-uniform distributed power amplifier (NDPA) topology and...
A hybrid power amplifier building block and a power amplifier module from 2 GHz to 6 GHz were designed, fabricated and measured. These power amplifiers are all based on AlGaN/GaN HEMT technology. The future applications for these types of power amplifiers are mainly electronic warefare (EW) applications. Novel communication jammers and especially active electronically scanned array EW systems have...
A hybrid power amplifier building block and a power amplifier module from 2 GHz to 6 GHz were designed, fabricated and measured. These power amplifiers are all based on AlGaN/GaN HEMT technology. The future applications for these types of power amplifiers are mainly electronic warefare (EW) applications. Novel communication jammers and especially active electronically scanned array EW systems have...
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