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Alumina (Al2O3) thin films have been deposited on silicon substrates by atomic layer deposition at 200°C using TMA as Al precursor and H2O or O3 as oxygen precursor. The growth rate has been found to be lower for ozone-based processes as compared to H2O. The electrical characterization of the deposited layers has shown that when using O3 the films exhibit larger defect densities as compared to those...
In this work we have investigated the effect of thin In0.2Ga0.8As capping layer and pulsed laser annealing (PLA) on self-aligned enhancement mode n-channel In0.53Ga0.47As metal-oxide-semiconductor field effect transistor (MOSFET). We present the electrical and material characteristics of TaN/ZrO2/In0.2Ga0.8As/In0.53Ga0.47As n-MOSFET with atomic layer deposition (ALD) ZrO2. Electrical characteristics...
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