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The surface passivation for InGaN/GaN multilayer solar cells was investigated, and it was confirmed that the device with an atomic-layer-deposited (ALD) Al2O3 passivation film showed high internal and external quantum efficiencies of 99 and 84%, respectively, along with a high energy conversion efficiency of 1.31% under a 1-sun air-mass 1.5 global illumination. The current−voltage characteristics...
We have demonstrated high-performance deep-submicron inversion-mode InGaAs MOSFETs with gate lengths down to 150 nm with record Gm exceeding 1.1 mS/μm. Oxide thickness scaling is performed to improve the on-state/off-state performance and Gm is further improved to 1.3 mS/μm. HBr pre-cleaning, retro-grade structure and halo-implantation processes are first time introduced into III-V MOSFETs to steadily...
This letter presents details of high-performance enhancement-mode GaN MIS high-electron-mobility transistor (MIS-HEMT) devices. Devices with an n-GaN/i-AlN/n-GaN triple cap layer, a recessed-gate structure, and high- k gate dielectrics show high drain current and complete enhancement-mode operation. The maximum drain current and threshold voltage (Vth) are 800 mA/mm and +3 V, respectively. These...
In this paper, high-performance inversion-type E-mode In0.53Ga0.47As and In0.65Ga0.35As MOSFETs with ALD Al2O3 as gate dielectric is demonstrated and systematically studied their subthreshold or weak inversion characteristics. Much more works are needed to make this novel device structure a competitive technology for ultimate CMOS at 22 nm node or beyond. The work is supported by National Science...
In this paper, inversion n-channel GaN MOSFETs using atomic-layer-deposited (ALD) Al2O3 as a high k gate dielectric is demonstrated for the first time electrical performance close to those of the silicon based MOSFET. Device performance are markedly improved compared to the previous results of GaN MOSFETs with high k dielectrics.
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