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GaN emitters have historically been of hexagonal phase due to natural crystallization. Here we introduce a cubic phase GaN emitter technology that is polarization-free via cointegration on cheap and scalable CMOS-compatible Si(100) substrate.
Hybrid integration of GaN and Si photonic devices is promising. Using a polymer bonding technique, GaN microring resonators are fabricated on Si substrate. Transmission characteristics of the GaN microring is measured.
We present recent progress achieved with III-nitride photonic circuits epitaxially grown on silicon(111). The photonic circuits embed two-dimensional photonic crystals and microdisk resonators coupled to suspended waveguides. We discuss the linear and nonlinear response of the resonators through second and third harmonic generation.
A monolithic integrated photonic platform is essentially required for a broad range of applications, including optical interconnect, quantum information processing, lighting, display, and sensing. To date, however, a ubiquitous platform for photonic integration has remained elusive. While Si photonics has been extensively studied, it has several serious shortcomings [1], including optical absorption...
Starting with its 50th anniversary in 1992, I have seen 25 years of electron and photon device research at the DRC; let us look over this history and then guess at the future.
In (Ga) N nanowires can be grown catalyst-free on silicon substrates by molecular beam epitaxy with density in the range of 108-1011cm-2 and lengths in the range of a few micrometers depending on the growth time. The nanowires grow vertically in the wurtzite crystalline form and the In composition of the nanowire can be varied to produce emission in the range of 366-700nm. Most importantly, extensive...
Ga(In)N nanowires and Ga(In)N quantum disks can be grown defect-free on silicon with p- and n-doping to form diodes. We will describe the characteristics of light-emitting diodes and electrically injected single nanowire single photon sources.
Semiconductor nanowires can be grown with a high degree of perfection and they start to find their use into various kinds of device applications. Research on the growth of nanowires has led to many unique opportunities, such as a high degree of freedom in combining different semiconductors into 3D heterostructures [1]. Interesting nanowire-specific challenges are also dealt with, such as the ambiguity...
Phonon-assisted anti-Stokes fluorescence has been observed in GaN film grown on Si (111) substrate. The donor-acceptor pairs and bound excitons have played primary roles in the generation of anti-Stokes fluorescence.
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