The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Photonic-crystal-waveguide-assisted (PCW-assisted) directional coupler fabricated from a hybrid nanophotonic fabrication platform of Si and GaN was studied. The coupler consisted of a Si PCW stacked on top by a GaN ridge waveguide (GaN RdW). High scattered near-infrared intensity at the output ports of the coupler was observed. The maximum coupling found was around 50%. The study may be promising...
This paper summarizes the research outcome intended to identify the most suitable device architecture and its implementation for cell-level power conversion in a photovoltaic (PV) system. The fabrication process to accommodate the power conditioning unit with the PV cells using the same process run have been presented in this paper. Using this method, the entire converter can be embedded with the...
This paper reports simple and novel in-parallel fabrication processes of devices based in nanowires which avoid photolithography to pattern metallic electrodes. The wafer-level approaches allow low-risk device metallization of grown or deposited nanowire devices by selectively depositing evaporated metal on nanowire wafers. A silicon microstencil is thus used as hard mask defining the electrode regions...
In this article, Gallium nitride (GaN) cantilevers integrated with AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated with a GaN-on-silicon platform, which is fully compatible with the standard HEMTs fabrication process. A type of micro-bending test was used to characterize the piezoresponse of AlGaN/GaN HEMT on the GaN cantilever. The modulation capability of the AlGaN/GaN heterostructures...
An AlN-based intersubband optical switch was fabricated with spot-size converter utilizing Si3N4 as a cladding layer. Intersubband absorption was observed at 1.48 mum. Absorption saturation by 5 dB was achieved with energy of 25 pJ.
For several decades, the output from semiconductor manufacturers has been high volume products with process optimisation being continued throughout the lifetime of the product to ensure a satisfactory yield. However, product lifetimes are continually shrinking to keep pace with market demands. Furthermore there is an increase in dasiafoundrypsila business where product volumes are low; consequently...
Advances in micromachining technology can facilitate the integration of SAW (Surface Acoustic Wave) devices and CMOS circuitry on IC scale substrate for Monolithic fabrication. The optimal design and performance of these filters can be reached by using new Smart materials. The key component in the structure of the SAW device is the piezoelectric materials used which depends mainly on some important...
In deep submicron era, to prevent larger amount of SRAM from more frequently encountered overheating problems and react accordingly for each possible hotspots, multiple ideal run-time temperature sensors must be closely located and response rapidly to secure system reliability while maintaining core frequency. This paper presented a method to extract run-time temperature information from multiple...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.