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This paper focuses on performance benchmarking of Gallium Nitride based transistors operating in a soft-switching DC-DC converter. Two prototype converters rated for 300 W were assembled to compare the performance of Si MOSFETs and GaN HEMTs: 100 V devices were used in the current-fed input side and 650 V ones in the output voltage-fed side. The experimental results confirm superior switching performance,...
Usage of power converters in a vast variety of equipments from cellphones, laptops to automobiles, aeroplanes and satellites is increasing. Different synchronous buck converter configurations are considered in this work using Silicon (Si) devices and Gallium Nitride (GaN) devices of equal current ratings. The performance of these converters in terms of power losses and overall efficiency are compared...
GaN devices have emerged as a possible replacement for silicon devices in various power conversion applications and as an enabler of new applications not previously possible. This paper presents a 600V Gallium-Nitride (GaN) device based isolated bidirectional DC-DC converter applied in battery energy storage systems. Apart from the features of low turn-off loss, low output capacitance and low drain-source...
This paper presents a design consideration of GaN FET-based resonant dc-dc converter, and the efficiency and ZVS characteristics of the resonant dc-dc converter based on GaN FET parameters are theoretically analyzed. To verify the validity of analysis, a 600W phase-shift full-bridge dc-dc converter is designed and implemented. The faulty turn-on and ZVS issue caused by GaN FET characteristics are...
This paper presents a novel GaN transistor based bidirectional isolated DC-DC converter for stationary energy storage device (SESD) for 400V DC microgrid. The improvements achieved in the application includes: first, benefitting from the internal ultra-fast free-wheeling diode, the converter's operation range can be expended to light load conditions (switches operate in hard switching). The light...
This paper presents a distributed energy storage device (DESD) based on a novel isolated bidirectional DC-DC converter with 650V GaN transistors. The device integrates a low-voltage (13.2V) Li-ion battery pack, an embedded bidirectional DC-DC converter and wireless communication system. The three parts are packaged together, thus it can be directly connected to high-voltage (380V) DC grid, enabling...
Wide band gap semiconductor devices have a promising future in various power converter applications due to their higher performance characteristics such as high frequency, high voltage and high operating temperature. For power switching applications, wide band gap materials mainly Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are attractive. In this paper, the detailed design analysis for...
To achieve the highest power conversion efficiency, heterogeneous chip-scale integration of silicon-based and GaN-based power switches with SiC power diodes, silicon CMOS control IC, MEMS inductor and micro microchip supercapacitor assembled using advanced packaging and microcooling is reported.
The DC and AC characteristics of a 30 V AlGaN/GaN HEMT was investigated by numerical simulations. By properly model the 2DEG in the AlGaN/GaN interface, we obtain a maximum transconductance of 221 mS/mm, a saturation current density of 1.28 A/mm, a specific Rdson of 2.5 mOmega-mm2, a specific Qgd of 0.62 nC/mm2 and the value of FOM of 1.6 mOmeganC. The comparison with of the state-of-the-art Si-LDMOS...
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