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3C-Silicon Carbide (SiC) has been identified as a potential biomaterial for implantable devices. The prospect of 3C-SiC membrane as the working component for BioMEMS in in-vitro blood pressure sensing could be a new challenge for biomedical engineers. Although, 3C-SiC is known to be biocompatible, but the micromachining process normally used in semiconductor industry might alter the biocompatibility...
The subsurface damage (SSD) distributions in different crystal orientations and radial locations of silicon wafers (100) are analyzed through cross-section microscopy method. The experimental results show that the subsurface damage depth is non-uniform in the ground wafer. Along the radial direction, the subsurface damage depth increases from the center to the edge of the wafer, and the depth in <110>...
The subsurface damage (SSD) distributions in different crystal orientations and radial locations of silicon wafers (100) are analyzed through cross-section microscopy method. The experimental results show that the subsurface damage depth is non-uniform in the ground wafer. Along the radial direction, the subsurface damage depth increases from the center to the edge of the wafer, and the depth in <110>...
In this study, we present a smooth enucleation process on a microfluidic chip. To improve the success rate of enucleation and increasing the potential viability of the enucleated oocyte, a microfluidic system is specially designed. Magnetically driven MicroTool (MMT) control the flow distribution in the microchamber. Designed microchannel with height difference is for the purpose of confining oocyte...
The charge storage in and conduction through nanometer-scaled Si-based quantum dots (QDs) have attracted considerable attention because of their importance in practical applications such as multi-valued memories and functional nano-devices with quantum transport. In this work, we focused on the electron transport properties through self-aligned Si-based QDs by means of atomic force microscopy (AFM)...
In via-first and via-mid TSV integration flows, Si must be removed from the backside of the wafer to make contact with the bottom of the TSVs. This operation is performed using a mechanical grind followed by a reveal etch. We show the results of TSV reveal using both a wet and dry etch. A set of measurements is performed on the TSV wafers and the bonded stack to select etch parameters to achieve the...
We developed a novel detachable bonding process by controlling wettability of a bonding surface. A high hydrophobic surface was formed in the bonding area for adhesion blocking. We applied an adhesive material with high thermal resistance at around 350 °C. In this paper, the bonding characteristics of the novel detachable bonding process was estimated by evaluating the shear strength and the dissolution...
Advances in micromachining technology can facilitate the integration of SAW (Surface Acoustic Wave) devices and CMOS circuitry on IC scale substrate for Monolithic fabrication. The optimal design and performance of these filters can be reached by using new Smart materials. The key component in the structure of the SAW device is the piezoelectric materials used which depends mainly on some important...
Plasma-exposed Si surface related to Si recess in source/drain region was investigated in detail for various superposed bias configurations with frequencies of 13.56 MHz and 400 kHz. Two different bias powers were utilized by an inductively coupled plasma reactor (ICP). The surface layer (SL) and the interfacial layer between the SL and Si substrate (IL) were analyzed by spectroscopic ellipsometry...
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