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An improved nonlinear current-voltage (I-V) characteristics model for nanometer range GaAs MESFETs has been developed. In this regard, Ahmed et al. model for submicron GaAs MESFETs has been modified. In this modification, the effects of both drain-to-source voltage, VDS, and gate-to-source voltage, VGS, on the output conductance, gd, have been incorporated. Moreover, the effect of VGS on the onset...
This work models and simulates the electrothermal properties of GaAs pHEMT based Monolithic Microwave Integrated Circuits (MMIC). The temperature increase of each component due to the self heating of the power devices in the packages was simulated coupled with the static electromagnetic analysis. A linear RC thermal macromodel was developed for the die, and the temperatures are solved by using nodal...
This paper presents a novel particle swarm based optimization technique to extract small signal equivalent circuit model parameters of a fabricated GaAs MESFET device. The small signal model includes 16 different circuit elements and all are successfully and accurately extracted using the proposed technique. The proposed technique overcomes the difficulties of initial guess of solution and low convergence...
This paper is discusses about parasitic effect of spiral inductors on 5.8 GHz low noise amplifier (LNA) performances based on 0.5 mum GaAs pHEMT technology. Using S-parameter simulation, performance of the LNA between lump and distributed circuit are compared at 5.8 GHz. Electrical performance of the LNA performances by placing ideal components with non-ideal components shows that noise figure is...
A nonlinear empirical model is here adopted to model the cold-FET behaviour of a GaAs PHEMT, in the framework of a resistive mixer application. The model, purely mathematical and technology independent, is suitably identified in the device operative region of interest and is validated in large-signal conditions by exploiting a measurements setup based on LS-VNA.
This paper gives an overview on recent achievements in the modeling of GaAs or InP based HBTs. The emphasis lies on the description of weakly nonlinear behavior, and on advanced descriptions for 1/f and shot noise for nonlinear simulation. Although compact HBT modeling already reached a high level of accuracy, certain limitations remain that will also be addressed.
In response to the continually increasing appetite for bandwidth, most transistor technologies have recently made great strides towards higher cutoff frequencies: Silicon MOSFETs, SiGe HBTs, InP-based HEMTs and a variety of InP -based HBTs all show cutoff frequencies fT and/or fMAX exceeding 300 GHz, and in some cases approaching 800 GHz. Proponents of various technologies have stated that the development...
This paper presents a rigorous numerical approach to the assessment of electro-thermal instabilities arising in high-power semiconductor devices operating under time-periodic conditions. The methodology is entirely developed in the frequency domain with reference to the harmonic balance technique, i.e. no time-domain calculations are required for the determination of the Floquet multipliers exploited...
Compact pHEMT amplifiers, which are composed of newly developed miniaturized multilayer inductors and capacitors, have been designed, fabricated and characterised. Their measured performances are presented and compared with those of amplifiers composed of conventional planar components. The results show that multilayer technology reduces the size of the amplifiers by approximately 50% while maintaining...
This paper aimed to study the linearity in the 5.2 GHz power amplifier microwave monolithic integrated circuit (MMIC), which was performed with a 0.15 mum AlGaAs/InGaAs D-mode pHEMT technology. The power amplifier (PA) was studied taking into account the linearizer circuit and the coplanar waveguide (CPW). Based on those technologies, the power amplifier obtained the output power of 13.3 dBm and the...
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