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Ni₂S_{2-x} thin films with x=0, 0.5, and 1 were prepared by chemical bath deposition technique. Amorphous structure was discovered by XRD for x=1, while α-Ni₇S₆ and NiS phases were discovered for x=0, and x=0.5 respectively. SEM graphs of the studied films have confirmed the XRD results. Optical band gap values increase from 0.845 to 0.912 eV, with increase of the composition x from 0 to 1. Activation...
The electrical behaviour of porous silicon layers has been investigated on one side of p-type silicon with various anodization currents, electrolytes, and times. Electron microscopy reveals the evolution of porous silicon layer morphology with variation in anodization time. In this work electrical conductivity of bulk silicon and porous layer which is formed by electrochemical etching is compared...
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