The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Tin sulphide is a promising absorber material for low-cost and earth abundant thin film solar cells. In this regard, we have studied phase composition, structural, and electrical properties of n-CdS/p-SnS heterostructure obtained by the close spaced vacuum sublimation (CSS) method. Surface and cross-sectional morphology of the structure were studied by using of field emission scanning electron microscope...
In this paper, Ti-doped GaZnO (GTZO) quaternary alloys were used as the transparent conductive oxides (TCOs) for Cu(In, Ga)SeSe2 (CIGS) solar cell application. These thin films are highly favorable for solar power systems. Photoluminescence measurement and X-ray diffraction were employed to investigate the GTZO thin films. Advantageous crystal quality was produced by radio-frequency magnetron sputtering...
The Cu2ZnSn(S,Se)4 (CZTSSe) absorbers were fabricated by two step process which consists of deposited stacking precursor followed by selenization. We investigated the influence of adding sodium into CZTSSe absorbers via sputtering NaF layer during the fabrication of precursor, or evaporating NaF layer on top of CZTSSe absorbers followed by vacuum annealing. We discovered that the NaF layer at the...
Iron pyrite, FeS2 is a semiconductor that has attention as next generation material for solar cells. We reported the evaluation of band structure and the conductivity of FeS2 thin film toward a realization of FeS2 heterojunction solar cells. FeS2 thin film was prepared by spin-coating. The pyridine solution which included Iron(III) acetylacetonate was utilized as a precursor ink and the precursor...
Doping Cu(In,Ga)Se2 (CIGS) thin films with Sb can provide large grains at lower processing temperatures than are normally required. In this study, we incorporated Sb into the precursor of a two-step selenization process. We saw enhanced grain size and improved device performance compared to similarly processed CIGS films made without Sb. The optoelectronic properties of the Sb-doped CIGS films were...
Cu2ZnSnS4 solar cells are fabricated following an all-sputtering in line vacuum approach. 6-inch semi-square stainless steel substrates are used. A compositional and structural study of the absorber layer is conducted before and after annealing to assess the uniformity of both the sputtering and the annealing process. It is found that while the precursors are uniform both in morphology and composition,...
CuGaSe2 thin films with different Cu/Ga ratio were studied using photoluminescence (PL) method. Measurement at 1.4 K shows asymmetrically broadened PL spectra for all the samples where PL-peaks shift to lower energy with a decrease of the Cu/Ga ratio. Excitation power and temperature dependent PL spectra were explained using donor to acceptor pair transition under the influence of potential fluctuation...
We have studied the effect of substrate temperature in molybdenum (Mo) back contact deposition on its structural evolution, optical properties, and most importantly, the over-deposited CuIn1−xGaxSe2 solar cell performance. A series of Mo thin films was DC sputtered onto thermally oxidized Si at substrate temperatures from 25°C to 385°C. Real time spectroscopic ellipsometry (RTSE) was performed to...
We investigated the synthesis of kesterite Cu2ZnSnS4 (CZTS) thin films using thermal evaporation from copper (Cu), zinc (Zn) and tin (Sn) pellets and post-annealing in a sulfur atmosphere. Two different metal precursor stacking orders (Cu/Sn/Zn/Cu and Cu/Sn/Cu/Zn) have been tested and experimental results prove that a layer of Cu on the top provides higher compositional uniformity and fewer secondary...
We propose a ZnO/Si single heterojunction solar cell model based on PC1D simulations and preliminary experimental support. The front ZnO film is intended to perform as antireflection coating as well as electrically active layer in pn junction formation. Considering importance of optical properties of ZnO as front n-layer, experiments are performed to find optimized growth window for ZnO using MOCVD...
Cadmium sulfide (CdS) thin films were prepared by simple thermal evaporation at different substrate temperatures. Increasing the substrate temperature during CdS deposition led to a significant increase in the CdS film resistivity due to a reduction in carrier concentration and degradation in the carrier mobility. SEM results showed that high substrate temperature yielded large grain size of CdS films...
In this work, a TiO2 thin film was deposited as a buffer layer onto ITO film at front contact of CdS/CdTe solar cell. The TiO2 thin film was prepared by reactive rf-sputtering from a Ti target. The CdTe film was grown by conventional CSS technique. The cells were activated by annealing at 400 °C in Argon-Oxygen-CHClF2 atmosphere. From DRX analysis of TiO2 thin film was determinate that it has Rutile...
Metal-assisted etching can be used to etch high aspect ratio structures in silicon (Si) wafers. Using Au as catalytic metal, we have developed a simple and robust technique which allows very high aspect ratio structures to be etched on n-type <100> substrates. For example, arrays of hundreds of narrow (10µm) and long (85mm) trenches can be etched completely through a 650µm thick wafer in order...
We describe work towards an interdigitated back contacted (IBC) solar cell utilizing ion implanted, passivated contacts. Formation of electron and hole passivated contacts to n-type CZ wafers using tunneling SiO2 and ion implanted amorphous silicon (a-Si) are described. P and B were ion implanted into intrinsic amorphous Si films at several doses and energies. A series of post-implant anneals showed...
The back contact issues of Cu2ZnSnS4 (CZTS) solar cells are rarely studied. The conventional back contact layers used for CZTS are molybdenum (Mo) and moly-disulfide (MoS2). In this paper, the band offset at the Mo/MoS2 interface is reported. The Mo/MoS2 interface was formed by annealing Mo foil in a sulfur rich ambient. XPS/UPS spectra were then obtained without exposing the sample to ambient atmosphere...
Cu2SnSe3 (CTSe) thin films were fabricated by coevaporation on soda-tune glass substrates at the substrate temperature of 300 °C under rations Co Sd supply ratios. From X-ray diffraction ( XRD) analyses, diffraction peaks of CTSe with a cubic sphalerite structure were observed in all CTSe thin films. In addition, SnSe and SnSe2 phases were also detected in Sn-ricb CTSe thin films. On the other bands,...
We report on the effect of Na incorporation into Cu(In,Ga)Se2 (CIGS) for thin-film solar cells. Na ions were supplied by NaF films with different thicknesses, while those from the soda-lime glass substrate were controlled by a presence or an absence of a SiOx barrier. Gradually increasing a Na content in CIGS was found in the structures of CIGS/Mo/SiOx/SLG, CIGS/Mo/SLG, CIGS/5 nm-NaF/Mo/SiOx/SLG,...
Thin crystalline silicon solar cells are of interest due to significant material cost reduction and potentially high conversion efficiency. We have previously demonstrated a patented, novel exfoliation technology capable of producing large area (156×156 mm) 25 µm thin flexible mono c-Si cells with high efficiencies. In this paper we address the mechanical strength and handling requirements of these...
Top-down Aluminum Induced Crystallization (TAIC) has been used to form the p+ emitters of n-type solar cells. TAIC is a low temperature process with the potential for very good junction passivation and avoidance of parasitic absorption of amorphous silicon experienced by HIT cells. During experimentation, several crystallization possibilities emerged. The structure of these emitters were determined...
Cu2ZnSn(S, Se)4 thin films and solar cells were fabricated using binary and ternary nanoparticle precursor films selenized using three different processes. Cross-sectional SEM images of the resulting CZTSSe solar cells do not show significant difference in microstructure. Detail analyses of the CZTSSe solar cells using current-voltage (J-V), external quantum efficiency (EQE), temperature-dependent...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.