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Analysis of ultra-shallow junctions has become a critical requirement especially in the advent of new 3D device structures and technologies. Information derived from available traditional tools and concepts is no longer sufficient for use in TCAD tools for device performance optimization. Furthermore, the complex geometry and nanometer scale critical dimensions of current and future technology node...
A novel reverse conducting insulated-gate bipolar transistor (RC-IGBT) is proposed and investigated by numerical simulations. This new device features an oxide trench inserted between the N-collector and the P-collector. The oxide trench increases the collector short resistance by cutting off the low resistance electron path which is formed by the N-buffer layer. The snapback effect is therefore suppressed...
Cellular based biosensing can serve as an effective method for detection of unknown toxins by monitoring cellular response. Electric cell-substrate impedance sensing (ECIS) does this by measuring the impedance of a cell monolayer grown on interdigitated gold electrodes. This is done in situ and in real time without disrupting the monolayer. As the monolayer settles and grows to confluence an increase...
The reason that existing models have underestimated the parasitic resistance of nano-scale MOSFET biased at low gate voltage was discussed. Then an improved resistance model was proposed. Finally, the influences of several technical parameters on the parasitic resistance were analyzed through numerical simulation, and some directions and measures might be taken to reduce the parasitic resistance.
Ultra Thin Body Si-On-ONO (UTB SOONO) transistors with ultra thin spacer are successfully demonstrated and evaluated. They have shown increased driving current more than 30% compared with conventional UTB SOONO transistors with thick spacer due to reduced source/drain resistance without short channel effect degradation by using thin spacer. In this paper, it is shown that thin spacer technology is...
The recessed gate IGBT has a lower on-state voltage drop compared with the DMOS IGBT, because it doesn't have a JFET region. But due to the electric field concentration in the corner of the gate edge, the breakdown voltage decreases.
This paper considers mechanical stress and strain in a piezoresistive cantilever sensor under surface stress loading, which is the loading condition that occurs in biochemical sensing applications. Finite element simulations examine the piezoresistor sensitivity due to changes in cantilever length, width, and thickness, and piezoresistor size, location, and depth. A few unexpected results are found...
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