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The scaling roadmap of devices under a “more than Moore” scenario is resulting in the emergence of new types of devices. Among them, memristors seem to be promising candidates to be suitable for various areas of application such as in memories and neuromorphic computing chips. However, memristive devices still face some challenges to be resolved before becoming a mainstream. This work analyzes the...
As the technology scales down, the increased power density brings in significant system reliability issues. Therefore, the temperature monitoring and the induced power management become more and more critical. The thermal fluctuation effects of the recently discovered spintronic memristor make it a promising candidate as a temperature sensing device. In this paper, we carefully analyzed the thermal...
The fourth passive circuit element, memristor, has attracted increased attentions since the first real device was discovered by HP Lab in 2008. Its distinctive characteristic to record the historic profile of the voltage/current through itself creates great potentials in future system design. However, as a nano-scale device, memristor is facing great challenge on process variation control in the manufacturing...
Spintronic devices have recently attracted significant attentions in solid state circuit society as a promising device in the applications of nonvolatile memory and emerging circuit design, i.e., memristor-based system. In this paper, we introduce Tunneling magnetoresistance (TMR) device - a popular spintronic device structure and its applications in 1) multi-level cell memory design; 2) memristive...
In this paper, we present a compact model of the spintronic memristor based on the magnetic-domain-wall motion mechanism for circuit design. Our model also takes into account the variations of material parameters and fabrication process, which significantly affects the actual electrical characteristics of a memristor in nano-scale technologies. Our proposed model can be easily implemented by Verilog-A...
Spintronic memristor devices based upon spin torque induced magnetization motion are presented and potential application examples are given. The structure and material of these proposed spin torque memristors are based upon existing (and/or commercialized) magnetic devices and can be easily integrated on top of a CMOS. This provides better controllability and flexibility to realize the promises of...
The 4th fundamental circuit elements - memristor received significant attentions after a real device was recently demonstrated for the first time. Besides the solid-state thin film memristive device, sprintonic memristor was also invented based on the magnetic technology. In this paper, we describe a compact model of the spintronic memristor based on the magnetic-domain-wall motion mechanism. Our...
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