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An electrochemically-gated junction field-effect transistor with metallic conducting indium tin oxide nanoparticle array as active layer is reported. Fabrication of a field-effect device with a degenerative semiconductor like indium tin oxide (carrier concentration 10^{20}-10^{21} cm^{-3}) is possible by exploiting the high surface-to-volume ratio of nanoparticles and high surface charge density achievable...
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