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Localised vibrational mode infrared absorption (10 K) and Hall measurements were made on a series of Si doped Al_{x}Ga_{1-x}As samples with 0 ≤ x ≤ 0.25 grown by liquid phase epitaxy. Localised vibrational modes were detected from Si_{Ga} donors, Si_{As} acceptors and Si_{Ga}-Si_{As} pairs which increased in frequency as x increased. The assignments of new lines observed at 386, 388 and 391 cm^{-1}...
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