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The ultrathin high-purity single-crystal indium films with atomically flat surfaces, and precisely known thicknesses in UHV conditions were prepared These films were deposited on the Si(111)-(7×7) and Si(111)-(6×6)Au substrate cooled to temperatures up to 110 K. The growth of the indium films was studied by. reflection high-energy electron diffraction (RHEED). Pronounced specular beam intensity oscillations...
A new method of analysing shapes of RHEED intensity oscillations observed during epitaxial growth of ultrathin films is presented. The intensity of the specular electron beam is computed by solving the one-dimensional Schrödinger equation. The method can be used for interpreting data collected at very low glancing angle (< 1°) of the incident electron beam. In the paper we show numerically determined...
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