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We report on room-temperature photoluminescence (PL) properties of light-emitting silicon produced by excimer (XeCl, ArF) laser crystallization of undoped hydrogenated amorphous silicon (a-Si:H). PL intensity increases linearly with the number of applied laser pulses. We annealed the recrystallized a-Si:H samples to modify the PL intensity and the spectral position. When compared with the XeCl laser...
Having shown by transmission electron microscopy that a suitable electrolytic processing of boron-doped amorphous hydrogenated silicon (a-Si:H) yields porous amorphous films with a nanometre-scale microstructure similar to that of highly porous p-type crystalline silicon layers (PcSL), we report and discuss the qualitative similarities and quantitative differences between the temperature dependence...
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