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This paper presents a design of a low power single ended CMOS LNA for reconfigurable applications including GPS, GSM (DCS1800, PCS1900), 3G (UMTS), WLAN b/g and LTE. Based on a wideband input matching, the LNA stages cover all band of interest while achieving a good trade-off between high gain, low noise figure and low power consumption. For multi-standard aim, the LNA selects the desired bands using...
A PSK receiver (RX) is proposed that employs a digital-intensive architecture based on sub-sampling, Q-enhancement, and digital IF to enable low-power (1.3 mW) and low-voltage (0.6 V) operation. Implemented in 65 nm CMOS, this work is compatible with the IEEE 802.15.6 (WBAN) narrowband physical layer specification and achieves 91 dBm and 96 dBm sensitivity at 10 BER for -DQPSK and ...
A digital-to-RF converter (DRFC) architecture for IQ modulator is proposed in this paper. The digital-RF converter utilizes the mixer DAC concept but a discrete-time oscillatory signal is applied to the digital-RF converter instead of a conventional continuous-time LO. The architecture utilizes a low pass ΣΔ modulator and a semi-digital FIR filter. The digital ΣΔ modulator provides a single-bit data...
This paper shows the comparison between the simulative evaluation and laboratory measurements of Noise Figure in Remote Keyless Entry (RKE) System working in two variants - 315MHz and 433MHz. The key point is that simulation was made in SPICE-like simulator using the PCB extraction data and models that do not use the telegraphists' equations. The difference between the simulative based values and...
The impact of narrow width effects on high frequency performance parameters like fT, fMAX, and RF noise in 35nm multi-finger n-MOSFETs is investigated in this paper. Multi-OD devices with extremely narrow width and fixed finger number (NF) reveal higher Rg and Cgg, which lead to the penalty in fT, fMAX, and NFmin. On the other hand, narrow-OD MOSFET with larger NF can yield lower Rg and higher fMAX...
Modern electronic equipment of mostly high-speed digital circuitry, switching devices, memories & sensitive semiconductors circuits is very susceptible to electromagnetic interference (EMI). The interference may come via the power supply; signal lines control lines or earth port. It makes good sense to test products to ensure they will work reliably in their intended operating environment. This...
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