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High resolution Schottky barrier alpha detectors have been fabricated on 20 µm n-type 4H-SiC epitaxial layers. The junction properties of the detectors were studied by current-voltage (I–V) and capacitance-voltage (C-V) measurements. A thermionic emission model applied to the forward I–V characteristic revealed an effective surface barrier height of 1.72 eV and a diode ideality factor of 1.18 suggesting...
Schottky barrier diode (SBD) radiation detectors have been fabricated on n-type 4H-SiC epitaxial layers and evaluated for low energy x- and -rays detection. The detectors were found to be highly sensitive to soft x-rays in the 50 eV to few keV range and showed 2.1 % energy resolution for 59.6 keV gamma rays. The response to soft x-rays for these detectors was significantly higher than that of...
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